Room: G 2.07

THz-VUV Ellipsometry and THz Electron Paramagnetic Resonance Ellipsometry Characterization of SiC and Other Wideband Gap and Ultrawideband Gap Materials

The control over electrical conductivity is critical key to enabling gallium oxide and related materials for high power electronic devices. Understanding the influence of dopants and defects onto the electrical and electronic properties is therefore of paramount importance [1]. Identifying defects and their local electronic properties remains a challenge. [more]
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