Publications of Matthias Scheffler

Polatoglou, H.M., M. Methfessel and M. Scheffler: Vacancy-formation energies at the (111) surface and in bulk Al, Cu, Ag, and Rh. Physical Review B 48 (3), 1877–1883 (1993).

Scheffler, M., J. Neugebauer and R. Stumpf: A step from surface fiction towards surface science. Journal of Physics: Condensed Matter 5, A91–A94 (1993).

Stampfl, C., J. Burchhardt, M. Nielsen, D.L. Adams, M. Scheffler, H. Over and W. Moritz: The structure of Al(111)-K-(√3 × √3)R30° determined by LEED: stable and metastable adsorption sites. Surface Science 287/288, 418–422 (1993).

Wenzien, B., J. Bormet, J. Neugebauer and M. Scheffler: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites. Surface Science 287/288, 559–563 (1993).

Ziegler, C., U. Scherz and M. Scheffler: Pressure dependence of deep levels of the As antisite, the Ga-vacancy-As-interstitial pair, and of the stable and metastable states of EL2. Physical Review B 47 (24), 16624–16627 (1993).

Ourmazd, A., M. Scheffler, M. Heinemann and J.-L. Rouviere: Microscopic Properties of Thin Films: Learning About Point Defects. MRS Bulletin 17, 24–31 (1992).

Dabrowski, J. and M. Scheffler: Self-consistent study of the electronic and structural properties of the clean Si(001) (2x1) surface. Applied Surface Science 56-58, 15–19 (1992).

Dabrowski, J. and M. Scheffler: Theory of defect metastabilities in III-V compounds. Physica Scripta T45, 151–153 (1992).

Dabrowski, J. and M. Scheffler: Defect metastability in III-V compounds. Mat. Sci. Forum 83-87, 735–750 (1992).

Doyen, G., D. Drakova, V. Mujica and M. Scheffler: Theory of the scanning tunneling microscope. Physica Status Solidi (A) 131 (1), 107–108 (1992).

Hebenstreit, J. and M. Scheffler: Self-consistent pseudopotential calculations for sodium adsorption on GaAs(110). Physical Review B 46 (16), 10134–10145 (1992).

Heinemann, M. and M. Scheffler: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science 56-58, 628–631 (1992).

Methfessel, M., D. Hennig and M. Scheffler: Calculated surface energies of the 4d transition metals: A study of bond-cutting models. Applied Physics A 55, 442–448 (1992).

Methfessel, M., D. Hennig and M. Scheffler: Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals. Physical Review B 46 (8), 4816–4829 (1992).

Neugebauer, J. and M. Scheffler: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B 46 (24), 16067–16080 (1992).

Stampfl, C., M. Scheffler, H. Over, J. Burchhardt, M. Nielsen, D. Adams and W. Moritz: Identification of stable and metastable adsorption sites for K adsorbed on Al(111). Physical Review Letters 69 (10), 1532–1535 (1992).

Wachutka, G., A. Fleszar, F. Máca and M. Scheffler: Self-consistent Green-function method for the calculation of electronic properties of localized defects at surfaces and in the bulk. Journal of Physics: Condensed Matter 4, 2831–2844 (1992).

Alves, J.L.A., J. Hebenstreit and M. Scheffler: Calculated atomic structures and electronic properties of GaP, InP, GaAs and InAs(110) surfaces. Physical Review B 44 (12), 6188–6198 (1991).

Gonze, X., R. Stumpf and M. Scheffler: Analysis of fully separable potentials. Physical Review B 44, 8503–8513 (1991).

Hebenstreit, J., M. Heinemann and M. Scheffler: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes. Physical Review Letters 67, 1031–1034 (1991).