Publications of Matthias Scheffler
All genres
Journal Article (600)
1995
Journal Article
Fiorentini, V., M. Methfessel and M. Scheffler: Surface stress, relaxation and reconstruction in fcc transition metals. Vuoto XXIV, 21–24 (1995).
Journal Article
Fiorentini, V., S. Oppo and M. Scheffler: Towards an understanding of surfactant action on the epitaxial growth of metals: the case of Sb on Ag(111). Applied Physics A 60, 399–402 (1995).
Journal Article
, , , R. Stumpf and M. Scheffler: Site-selective adsorption of C atoms on Al(111) surfaces. Physical Review Letters 74 (25), 5084–5087 (1995).
Journal Article
Groß, A., and M. Scheffler: Six-dimensional quantum dynamics of adsorption and desorption of H_2 at Pd(100): Steering and steric effects. Physical Review Letters 75, 2718–2721 (1995).
Journal Article
and M. Scheffler: Local chemical reactivity of a metal alloy surface. Physical Review Letters 74, 3487–3490 (1995).
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, , , and M. Scheffler: The interaction of hydrogen with the (110) surface of NiAl. Surface Science 331-333, 811–817 (1995).
Journal Article
Kley, A., J. Neugebauer and M. Scheffler: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors 775–782 (1995).
Journal Article
Kohler, B., P. Ruggerone, and M. Scheffler: Frustrated H-induced instability of Mo(110). Physical Review Letters 74, 1387–1390 (1995).
Journal Article
Methfessel, M., and M. Scheffler: Enhanced screening of core holes at transition-metal surfaces. Surface Review and Letters 2, 197–201 (1995).
Journal Article
Moll, N., M. Bockstedte, M. Fuchs, E. Pehlke and M. Scheffler: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, 2550–2556 (1995).
Journal Article
Oppo, S., V. Fiorentini and M. Scheffler: Size-effect surfactants for metal-on-metal growth: Sb on Ag(111). Vuoto XXIV, 37–39 (1995).
Journal Article
and M. Scheffler: Formation of localized excitons and the breaking of chemical bonds at III-V (110) surfaces. Proc. of the 22nd International Conference on the Physics of Semiconductors 485–488 (1995).
Journal Article
and M. Scheffler: Localized excitons and breaking of chemical bonds at III-V (110) surfaces. Physical Review Letters 75, 701–704 (1995).
Journal Article
Pehlke, E. and M. Scheffler: Hydrogen adsorption on and desorption from Si(001). Proc. of the 22nd International Conference on the Physics of Semiconductors 549–552 (1995).
Journal Article
Pehlke, E. and M. Scheffler: Theory of adsorption and desorption of H_2/Si(001). Physical Review Letters 74, 952–955 (1995).
Journal Article
Stampfl, C. and M. Scheffler: Theory of alkali metal adsorption on close-packed metal surfaces. Surface Review and Letters 2, 317–343 (1995).
Journal Article
, J. Bormet and M. Scheffler: Green function for crystal surfaces I. Comput. Phys. Commun. 88, 230–248 (1995).
Journal Article
and M. Scheffler: Poisoning of Pd(100) for the dissociation of H_2: a theoretical study of co-adsorption of hydrogen and sulphur. Surface Science 329, L605–L610 (1995).
1994
Journal Article
, , , , and M. Scheffler: Surface core-level shifts of some 4d-metal single-crystal surfaces: Experiments and ab-initio calculations. Physical Review B 50 (23), 17525–17533 (1994).
Journal Article
Biernacki, S.W. and M. Scheffler: The influence of the isotopic composition on the thermal expansion of crystalline Si. Journal of Physics: Condensed Matter 6 (26), 4879–4884 (1994).