Publications of Matthias Scheffler

Journal Article (600)

2000
Journal Article
Neugebauer, J., T.K. Zywietz, M. Scheffler and J. Northrup: Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science 159-160, 355–359 (2000).
Journal Article
Wang, X.-G., A. Chaka and M. Scheffler: Effect of the environment on alpha-Al_2O_3 (0001) surface structures. Physical Review Letters 84 (16), 3650–3653 (2000).
Journal Article
Petersen, M., F. Wagner, L. Hufnagel, M. Scheffler, P. Blaha and K. Schwarz: Improving the efficiency of FP-LAPW calculations. Computer Physics Communications 126 (3), 294–309 (2000).
Journal Article
Groß, A. and M. Scheffler: Dynamics of hydrogen dissociation at the sulfur-covered Pd(100) surface. Physical Review B 61 (12), 8425–8432 (2000).
Journal Article
Pentcheva, R. and M. Scheffler: Stable and metastable structures of Co on Cu(001): An ab initio study. Physical Review B 61 (3), 2211–2220 (2000).
Journal Article
LaBella, V.P., D.W. Bullock, Z. Ding, C. Emery, P.M. Thibado, P. Kratzer and M. Scheffler: A novel imaging mechanism to determine the atomic structure of the GaAs(001)-(2x4) surface. Omicron Newsletter 4, 4–5 (2000).
Journal Article
Wang, L.G., P. Kratzer, N. Moll and M. Scheffler: Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate. Physical Review B 62, 1897–1904 (2000).
1999
Journal Article
Liu, Q.K.K., N. Moll, M. Scheffler and E. Pehlke: Equilibrium shapes and energies of coherent strained InP islands. Physical Review B 60 (24), 17008–17015 (1999).
Journal Article
Nouvertné, F., U. May, M. Bamming, A. Rampe, U. Korte, G. Güntherodt, R. Pentcheva and M. Scheffler: Atomic exchange processes and bimodal initial growth of Co/Cu(001). Physical Review B 60 (20), 14382–14386 (1999).
Journal Article
Stampfl, C., H.J. Kreuzer, S.H. Payne and M. Scheffler: Challenges in predictive calculations of processes at surfaces: surface thermodynamics and catalytic reactions. Applied Physics A 69 (5), 471–480 (1999).
Journal Article
LaBella, V.P., H. Yang, D.W. Bullock, P.M. Thibado, P. Kratzer and M. Scheffler: Atomic structure of the GaAs(001)-(2x4) surface resolved using scanning tunneling microscopy and first-principles theory. Physical Review Letters 83 (15), 2989–2992 (1999).
Journal Article
Stampfl, C., H.J. Kreuzer, S.H. Payne, H. Pfnür and M. Scheffler: First-principles theory of surface thermodynamics and kinetics. Physical Review Letters 83 (15), 2993–2996 (1999).
Journal Article
Jacobi, K., J. Platen, C. Setzer, J. Márquez, L. Geelhaar, C. Meyne, W. Richter, A. Kley, P. Ruggerone and M. Scheffler: Morphology, surface core-level shifts and surface energy of the faceted GaAs(112)A and (112)B surfaces. Surface Science 439 (1-3), 59–72 (1999).
Journal Article
Eichler, A., J. Hafner, A. Groß and M. Scheffler: Rotational effects in the dissociation of H_2 on metal surfaces studied by ab initio quantum-dynamics calculations. Chemical Physics Letters 311 (1-2), 1–7 (1999).
Journal Article
Bonn, M., S. Funk, C. Hess, D.N. Denzler, C. Stampfl, M. Scheffler, M. Wolf and G. Ertl: Phonon- Versus Electron-Mediated Desorption and Oxidation of CO on Ru(0001). Science 285 (5430), 1042–1045 (1999).
Journal Article
Bonn, M., S. Funk, C. Hess, D.N. Denzler, C. Stampfl, M. Scheffler, M. Wolf and G. Ertl: Phonon- versus electron-mediated desorption and oxidation of CO on Ru(0001). Science 285 (5430), 1042–1045 (1999).
Journal Article
Stampfl, C. and M. Scheffler: Density functional theory study of the catalytic oxidation of CO over transition metal surfaces. Surface Science 433-435, 119–126 (1999).
Journal Article
Ganduglia-Pirovano, M.V. and M. Scheffler: Structural and electronic properties of chemisorbed oxygen on Rh(111). Physical Review B 59 (23), 15533–15543 (1999).
Journal Article
Kratzer, P., C.G. Morgan and M. Scheffler: Model for nucleation in GaAs homoepitaxy derived from first principles. Physical Review B 59 (23), 15246–15252 (1999).
Journal Article
Morgan, C.G., P. Kratzer and M. Scheffler: Arsenic dimer dynamics during MBE growth: Theoretical evidence for a novel chemisorption state of As_2 molecules on GaAs surfaces. Physical Review Letters 82 (24), 4886–4889 (1999).
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