Publications of M. Scheffler

Dabrowski, J.; Scheffler, M.; Strehlow, R.: Silicon Donor in Gallium Arsenide and its Relation to DX Centers. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), pp. 489 - 492 (1990)

Doyen, G.; Koetter, E.; Vigneron, J. P.; Scheffler, M.: Theory of Scanning Tunneling Microscopy. Applied Physics A: Materials Science and Processing 51, pp. 281 - 288 (1990)

Gonze, X.; Käckell, P.; Scheffler, M.: Ghost States for Separable, Norm-Conserving, Ab-Initio Pseudopotentials. Physical Review B 41, pp. 12264 - 12267 (1990)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110). Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), pp. 215 - 218 (1990)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces. Extended Abstract: Electronic, Optical and Device Properties of Layered Structures 21, pp. 71 - 75 (1990)

Maca, F.; Said, M.; Kambe, K.; Scheffler, M.: Electronic structure and angular resolved photoemission calculations for fcc and bcc silver surfaces. Vacuum 41 (1-3), pp. 538 - 542 (1990)

Máca, F.; Said, M.; Kambe, K.; Scheffler, M.: Electronic Structure and Angular Resolved Photoemission Calculations for fcc and bcc Silver Surfaces. Vacuum 41, pp. 538 - 542 (1990)

Methfessel, M.; Agrawal, B. K.; Scheffler, M.: The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), pp. 989 - 992 (1990)

Vigneron, J. P.; Scheffler, M.; Laloyaux, T.; Derycke, I.; Lucas, A. A.: Spatial Electron Current Distribution in a Scanning Tunneling Microscope. Vacuum 41, pp. 745 - 746 (1990)

Beeler, F.; Scheffler, M.: Calculation of total energies, reaction and diffusion processes of transition-metal point defects in silicon. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19), pp. 983 - 986 (1989)

Beeler, F.; Scheffler, M.: Theory of 4d-transition-metal ions in silicon: Total-energies, diffusion, electronic and magnetic properties. Mat. Sci. Forum 38-41, pp. 257 - 262 (1989)

Biernacki, S.; Scheffler, M.: Negative thermal expansion of diamond and zinc-blende semiconductors. Physical Review Letters 63, pp. 290 - 293 (1989)

Biernacki, S.; Scherz, U.; Gillert, R.; Scheffler, M.: Calculated thermodynamic potentials for the vacancy and the oxygen a-center in silicon. Mat. Sci. Forum 38-41, pp. 625 - 630 (1989)

Dabrowski, J.; Scheffler, M.: The As_Ga-As_i pair in GaAs, the arsenic antisite and the properties of EL2. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19), pp. 1023 - 1026 (1989)

Dabrowski, J.; Scheffler, M.: The EL2 defect in GaAs. Mat. Sci. Forum 38-41, pp. 51 - 58 (1989)

Dabrowski, J.; Scheffler, M.: The isolated arsenic antisite defect in GaAs and the properties of EL2. Physical Review B 40, pp. 10391 - 10401 (1989)

Overhof, H.; Scheffler, M.; Weinert, C. M.: Computation of hyperfine interactions for substitutional Se^+ and S^+ impurities in silicon. Mat. Sci. Forum 38-41, pp. 293 - 298 (1989)

Overhof, H.; Scheffler, M.; Weinert, C. M.: Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure. Materials Science and Engineering B 4, pp. 315 - 319 (1989)

Scheffler, M.: Chemical binding, stability and metastability of defects in semiconductors. Festkörperprobleme 29, pp. 231 - 250 (1989)

Scherz, U.; Weider, D.; Scheffler, M.: Electronic and vibrational properties of deep centers in semiconductors. Egyp. J. Sol. 12, p. 1 (1989)