Publications of Matthias Scheffler

Journal Article (609)

1998
Journal Article
J. Xie and M. Scheffler: Structure and dynamics of Rh surfaces. Physical Review B 57 (8), 4768–4775 (1998).
Journal Article
T.K. Zywietz, J. Neugebauer and M. Scheffler: Adatom diffusion at GaN(0001) and (0001̄) surfaces. Applied Physics Letters 73 (4), 487–489 (1998).
Journal Article
T.K. Zywietz, J. Neugebauer, M. Scheffler and J.E. Northrup: Novel reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors. Psi-k Newsletter 29, 112–124 (1998).
Journal Article
T.K. Zywietz, J. Neugebauer, M. Scheffler, J.E. Northrup and C.G. Van de Walle: Surface structures, surfactants and diffusion at cubic and wurtzite GaN. MRS Internet Journal of Nitride Semiconductor Research 3, e26 (1998).
1997
Journal Article
B.D. Yu and M. Scheffler: Physical origin of exchange diffusion on fcc(100) metal surfaces. Physical Review B 56 (24), R15569–R15572 (1997).
Journal Article
P. Alippi, P.M. Marcus and M. Scheffler: Strained tetragonal states and bain paths in metals. Physical Review Letters 78 (20), 3892–3895 (1997).
Journal Article
M. Arnold, G. Hupfauer, P. Bayer, L. Hammer, K. Heinz, B. Kohler and M. Scheffler: Hydrogen on W(110): an adsorption structure revisited. Surface Science 382 (1-3), 288–299 (1997).
Journal Article
M. Bockstedte, A. Kley, J. Neugebauer and M. Scheffler: Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics. Computer Physics Communications 107 (1-3), 187–222 (1997).
Journal Article
M. Bockstedte and M. Scheffler: Theory of Self-Diffusion in GaAs. Zeitschrift für Physikalische Chemie 200 (1-2), 195–207 (1997).
Journal Article
J.-H. Cho and M. Scheffler: Surface relaxation and ferromagnetism of Rh(001). Physical Review Letters 78 (7), 1299–1302 (1997).
Journal Article
M.V. Ganduglia-Pirovano, J. Kudrnovský and M. Scheffler: Adlayer core-level shifts of random metal overlayers on transition-metal substrates. Physical Review Letters 78 (9), 1807–1810 (1997).
Journal Article
A. Groß, M. Bockstedte and M. Scheffler: Ab initio molecular dynamics study of the desorption of D2 from Si(100). Physical Review Letters 79 (4), 701–704 (1997).
Journal Article
A. Groß and M. Scheffler: Role of zero-point effects in catalytic reactions involving hydrogen. Journal of Vacuum Science and Technology A 15 (3), 1624–1629 (1997).
Journal Article
A. Groß and M. Scheffler: Steering and ro-vibrational effects on dissociative adsorption and associative desorption of H2Pd(100). Progress in Surface Science 53 (2-4), 187–196 (1997).
Journal Article
A. Kley, P. Ruggerone and M. Scheffler: Novel diffusion mechanism on the GaAs (001) surface: the role of adatom-dimer interaction. Physical Review Letters 79 (26), 5278–5281 (1997).
Journal Article
B. Kohler, P. Ruggerone and M. Scheffler: Ab initio study of the anomalies in the He-atom-scattering spectra of H/Mo(110) and H/W(110). Physical Review B 56 (20), 13503–13518 (1997).
Journal Article
S. Narasimhan and M. Scheffler: A Model for the Thermal Expansion of Ag(111) and other Metal Surfaces. Zeitschrift für Physikalische Chemie 202 (1-2), 253–262 (1997).
Journal Article
E. Pehlke, N. Moll, A. Kley and M. Scheffler: Shape and stability of quantum dots. Applied Physics A 65 (6), 525–534 (1997).
Journal Article
C. Ratsch, A.P. Seitsonen and M. Scheffler: Strain dependence of surface diffusion: Ag on Ag(111) and Pt(111). Physical Review B 55 (11), 6750–6753 (1997).
Journal Article
P. Ruggerone, A. Kley and M. Scheffler: Bridging the length and time scales: from ab initio electronic structure calculations to macroscopic proportions. Psi-k Newsletter 21, 75–87 (1997).
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