Publications of M. Scheffler

Scheffler, M.; Vigneron, J. P.; Bachelet, G. B.: Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 49, pp. 1765 - 1768 (1982)

Schirmer, O.; Scheffler, M.: Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 15, pp. L645 - L650 (1982)

Scheffler, M.; Pantelides, S. T.; Lipari, N. O.; Bernholc, J.: Identification and properties of native defects in GaP. Physical Review Letters 47, p. 413 (1981)

Hora, R.; Scheffler, M.: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci. (1980)

Scheffler, M.; Horn, K.; Bradshaw, A. M.; Kambe, K.: Angular-resolved photoemission from physisorbed xenon. Surface science 80, pp. 69 - 77 (1979)

Bradshaw, A. M.; Scheffler, M.: Lateral interactions in adsorbed layers. J. Vac. Sci. Tech. 16, pp. 447 - 454 (1979)

Hoffmann, P.; Muschwitz, C. v.; Horn, K.; Jacobi, K.; Bradshaw, A. M.; Kambe, K.; Scheffler, M.: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 89 (1-3), p. 327 (1979)

Kambe, K.; Scheffler, M.: Theory of photoexcitation of adsorbates. Surface science 89, p. 262 (1979)

Scheffler, M.: The influence of lateral interactions on the vibrational spectrum of adsorbed CO. Surface Science 81, pp. 562 - 570 (1979)

Horn, K.; Scheffler, M.; Bradshaw, A. M.: Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters 41 (12), pp. 822 - 825 (1978)

Scheffler, M.; Horn, K.; Bradshaw, A. M.; Kambe, K.: Photoemission from physisorbed xenon. Nederlands Tijdschrift voor Vacuumtechniek 10 (2/3/4), p. 85 (1978)

Scheffler, M.; Kambe, K.; Forstmann, F.: Angle-resolved photoemission from adsorbates: Theoretical considerations of polarization effects and symmetry. Solid State Communications 25, pp. 93 - 99 (1978)

Jacobi, K.; Scheffler, M.; Kambe, K.; Forstmann, F.: Angle-resolved photoemission from the p(2x2) oxygen overlayer on Ni(001): Measurements and calculations. Solid State Communications 22, p. 17 (1977)

Jacobi, K.; Scheffler, M.; Kambe, K.; Forstmann, F.: Angle-resolved photoemission of the oxygen overlayer on Ni(001): Part 2 (Experiments). Proc. 7th Int. Vac. Congr. & 3rd Conf. Sol. Surf., p. 2227 (1977)

Schweitzer, L.; Scheffler, M.: Electronic properties of strained bonds in amorphous silicon: The origin of the band-tail states.

Demtröder, D.; Deutschmann, O.; Eck, B.; Gläser, R.; Goosen, L.; Grunwaldt, J.-D.; Krähnert, R.; Kragl, U.; Leitner, W.; Mestl, G. et al.; Reuter, K.; Rosowski, F.; Schäfer, A.; Scheffler, M.; Schlögl, R.; Schüth, F.; Schunk, S. A.; Studt, F.; Wagemann, K.; Wöll, C.: White Paper: The Digitalization of Catalysis-Related Sciences. German Catalysis Society (GeCatS), Frankfurt am Main (2019), 27 pp.

Scheffler, M.; Weinberger, P. (Eds.): Walter Kohn - Personal Stories and Anecdotes Told by Friends and Collaborators. Springer, Berlin (2003), 309 pp.

Horn, K.; Scheffler, M. (Eds.): Electronic Structure. Elsevier, Amsterdam (2000), 1058 pp.

Carbogno, C.; Blum, V.; Kokott, S.; Lederer, H.; Marek, A.; Merz, F.; Rampp, M.; Ren, X.; Scheffler, M.: Preparing electronic-structure theory for the exascale. In: High-Performance Computing and Data Science in the Max Planck Society, pp. 47 - 49. Max Planck Computing and Data Facility, Garching (2021)

Carbogno, C.; Scheffler, M.: Identifying novel thermal insulators in material space. In: High-Performance Computing and Data Science in the Max Planck Society, pp. 42 - 43. Max Planck Computing and Data Facility, Garching (2021)