Publications of M. Scheffler

Meyer, B.K., J.-M. Spaeth and M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters 52, 851–854 (1984).

Scheffler, M., J. Bernholc, N.O. Lipari and S.T. Pantelides: Electronic structure and identification of deep defects in GaP. Physical Review B 29, 3269–3282 (1984).

Pantelides, S.T., I. Ivanov, M. Scheffler and J.P. Vigneron: Multivacancies, interstitials, and self-interstitial migration in Si. Physica B 116, 18–27 (1983).

Vigneron, J.P., M. Scheffler and S.T. Pantelides: Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C 117/118, 137–139 (1983).

Bernholc, J., N.O. Lipari, S.T. Pantelides and M. Scheffler: Electronic structure of deep sp-bonded impurities in silicon. Physical Review B 26 (10), 5706–5715 (1982).

Scheffler, M., J.P. Vigneron and G.B. Bachelet: Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 49, 1765–1768 (1982).

Schirmer, O. and M. Scheffler: Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 15, L645–L650 (1982).

Scheffler, M., S.T. Pantelides, N.O. Lipari and J. Bernholc: Identification and properties of native defects in GaP. Physical Review Letters 47, 413 (1981).

Hora, R. and M. Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci., in press.

Scheffler, M., K. Horn, A.M. Bradshaw and K. Kambe: Angular-resolved photoemission from physisorbed xenon. Surface science 80, 69–77 (1979).

Bradshaw, A.M. and M. Scheffler: Lateral interactions in adsorbed layers. J. Vac. Sci. Tech. 16, 447–454 (1979).

Hoffmann, P., C.v. Muschwitz, K. Horn, K. Jacobi, A.M. Bradshaw, K. Kambe and M. Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 89 (1-3), 327 (1979).

Kambe, K. and M. Scheffler: Theory of photoexcitation of adsorbates. Surface science 89, 262 (1979).

Scheffler, M.: The influence of lateral interactions on the vibrational spectrum of adsorbed CO. Surface Science 81, 562–570 (1979).

Horn, K., M. Scheffler and A.M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters 41 (12), 822–825 (1978).

Scheffler, M., K. Horn, A.M. Bradshaw and K. Kambe: Photoemission from physisorbed xenon. Nederlands Tijdschrift voor Vacuumtechniek 10 (2/3/4), 85 (1978).

Scheffler, M., K. Kambe and F. Forstmann: Angle-resolved photoemission from adsorbates: Theoretical considerations of polarization effects and symmetry. Solid State Communications 25, 93–99 (1978).

Jacobi, K., M. Scheffler, K. Kambe and F. Forstmann: Angle-resolved photoemission from the p(2x2) oxygen overlayer on Ni(001): Measurements and calculations. Solid State Communications 22, 17 (1977).

Jacobi, K., M. Scheffler, K. Kambe and F. Forstmann: Angle-resolved photoemission of the oxygen overlayer on Ni(001): Part 2 (Experiments). Proc. 7th Int. Vac. Congr. & 3rd Conf. Sol. Surf. 2227 (1977).

Schweitzer, L. and M. Scheffler: Electronic properties of strained bonds in amorphous silicon: The origin of the band-tail states. Proc. Optical Effects in Amorphous Semiconductors 1984, 379–385