Publications of Karsten Horn

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Journal Article

J. Martínez-Blanco, M. Klingsporn and K. Horn: Selective adsorption of coronene on Si(1 1 1)-(7 × 7). Surface science 604 (5-6), 523–528 (2010).

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J.H. Dil, B. Hülsen, T.U. Kampen, P. Kratzer and K. Horn: Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon. Journal of Physics: Condensed Matter 22 (13), 135008 (2010).

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C. Enderlein, Y.S. Kim, A. Bostwick, E. Rotenberg and K. Horn: The formation of an energy gap in graphene on ruthenium by controlling the interface. New Journal of Physics 12 (3), 033014–1-033014–9 (2010).

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M. Weser, Y. Rehder, K. Horn, M. Sicot, M. Fonin, A.B. Preobrajenski, E.N. Voloshina, E. Goering and Y.S. Dedkov: Induced magnetism of carbon atoms at the graphene/Ni(111) interface. Applied Physics Letters 96, 012504–1-012504–3 (2010).

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2009

Journal Article

A. Bostwick, J.L. McChesney, T. Ohta, E. Rotenberg, T. Seyller and K. Horn: Experimental studies of the electronic structure of graphene. Progress in Surface Science 84 (11-12), 380–413 (2009).

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A.K. Shukla, R.S. Dhaka, S.W. D’Souza, M. Maniraj, S.R. Barman, K. Horn, P. Ebert, K. Urban, D. Wu and T.A. Lograsso: Manganese adlayers on i-Al-Pd-Mn quasicrystal: growth and electronic structure. Journal of Physics Condensed Matter 21, 405005–1-405005–8 (2009).

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A. Bostwick, J.L. McChesney, K.V. Emtsev, T. Seyller, K. Horn, S.D. Kevan and E. Rotenberg: Quasiparticle Transformation during a Metal-Insulator Transition in Graphene. Physical Review Letters 103 (5), 056404–1-056404–4 (2009).

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A.K. Shukla, R.S. Dhaka, S.W. D’Souza, S. Singh, D. Wu, T.A. Lograsso, M. Krajčí, J. Hafner, K. Horn and S.R. Barman: Quasiperiodic layers of free-electron metals studied using electron diffraction. Physical Review B 79 (13), 134206 (2009).

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T. Filleter, J.L. McChesney, A. Bostwick, E. Rotenberg, K.V. Emtsev, T. Seyller, K. Horn and R. Bennewitz: Friction and Dissipation in Epitaxial Graphene Films. Physical Review Letters 102 (8), 086102 (2009).

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M. Ruiz-Osés, D.G.de Oteyza, I. Fernández-Torrente, N. González-Lakunza, P.M. Schmidt-Weber, T.U. Kampen, K. Horn, A. Gourdon, A. Arnau and J.E. Ortega: Non-Covalent Interactions in Supramolecular Assemblies Investigated with Electron Spectroscopies. ChemPhysChem 10 (6), 896–900 (2009).

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K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellogg, L. Ley, J.L. McChesney, T. Ohta, S.A. Reshanov, J. Röhrl, E. Rotenberg, A.K. Schmid, D. Waldmann, H.B. Weber and T. Seyller: Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Materials 8, 203–207 (2009).

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2008

Journal Article

R. Cortes, A. Mascaraque, P. Schmidt-Weber, H. Dil, T.U. Kampen and K. Horn: Coexistence of Racemic and Homochiral Two-Dimensional Lattices Formed by a Prochiral Molecule: Dicarboxystilbene on Cu(110). Nano Letters 8 (12), 4162–4167 (2008).

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M. Moreno, A. Kumar, M. Tallarida, A. Ney, K.H. Ploog and K. Horn: Electronic signature of MnAs phases in bare and buried films grown on GaAs(001). Journal of Vacuum Science and Technology B 26 (4), 1530–1533 (2008).

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T. Seyller, A. Bostwick, K.V. Emtsev, K. Horn, L. Ley, J.L. McChesney, T. Ohta, J.D. Riley, E. Rotenberg and F. Speck: Epitaxial graphene: a new material. Physica Status Solidi B 245 (7), 1436–1446 (2008).

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M. Moreno, A. Kumar, M. Tallarida, K. Horn, A. Ney and K.H. Ploog: Electronic states in arsenic-decapped MnAs (11¯00) films grown on GaAs(001): A photoemission spectroscopy study. Applied Physics Letters 92 (8), 084103 (2008).

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T. Tegenkamp, T. Ohta, J.L. McChesney, H. Dil, E. Rotenberg, H. Pfnür and K. Horn: Coupled Pb Chains on Si(557): Origin of One-Dimensional Conductance. Physical Review Letters 100 (7), 076802–1-076802–4 (2008).

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T. Ohta, F. El Gabaly, A. Bostwick, J.L. McChesney, K.V. Emtsev, A.K. Schmid, T. Seyller, K. Horn and E. Rotenberg: Morphology of graphene thin film growth on SiC(0001). New Journal of Physics 10, 023034 (2008).

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publisher-version

Journal Article

A. Bostwick, K.V. Emtsev, K. Horn, E. Huwald, L. Ley, J.L. McChesney, T. Ohta, J. Riley, E. Rotenberg, F. Speck and T. Seyller: Photoemission studies of graphene on SiC: growth, interface, and electronic structure. Advances in Solid State Physics 47, 159–170 (2008).

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Journal Article

E. Rotenberg, A. Bostwick, T. Ohta, J.L. McChesney, T. Seyller and K. Horn: Origin of the energy bandgap in epitaxial graphene. Nature Materials 7, 258–259 (2008).

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