Publications of Matthias Scheffler

Heinemann, M.; Scheffler, M.: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science 56-58, pp. 628 - 631 (1992)

Methfessel, M.; Hennig, D.; Scheffler, M.: Calculated surface energies of the 4d transition metals: A study of bond-cutting models. Applied Physics A 55, pp. 442 - 448 (1992)

Methfessel, M.; Hennig, D.; Scheffler, M.: Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals. Physical Review B 46 (8), pp. 4816 - 4829 (1992)

Neugebauer, J.; Scheffler, M.: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B 46 (24), pp. 16067 - 16080 (1992)

Stampfl, C.; Scheffler, M.; Over, H.; Burchhardt, J.; Nielsen, M.; Adams, D.; Moritz, W.: Identification of stable and metastable adsorption sites for K adsorbed on Al(111). Physical Review Letters 69 (10), pp. 1532 - 1535 (1992)

Wachutka, G.; Fleszar, A.; Máca, F.; Scheffler, M.: Self-consistent Green-function method for the calculation of electronic properties of localized defects at surfaces and in the bulk. Journal of Physics: Condensed Matter 4, pp. 2831 - 2844 (1992)

Alves, J. L. A.; Hebenstreit, J.; Scheffler, M.: Calculated atomic structures and electronic properties of GaP, InP, GaAs and InAs(110) surfaces. Physical Review B 44 (12), pp. 6188 - 6198 (1991)

Gonze, X.; Stumpf, R.; Scheffler, M.: Analysis of fully separable potentials. Physical Review B 44, pp. 8503 - 8513 (1991)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes. Physical Review Letters 67, pp. 1031 - 1034 (1991)

Methfessel, M.; Hennig, D.; Weber, S.; Scheffler, M.: Ab-initio calculation of the effect of d-band occupation on the relaxation of transition metal surfaces. Proc. 75th We-Heraeus-Seminar and 21st Annual Internat. Symposium on Electronic Structure of Solids, pp. 174 - 176 (1991)

Methfessel, M.; Scheffler, M.: Full-potential LMTO calculations for atomic relaxations at semiconductor-semiconductor interfaces. Physica B 172, pp. 175 - 183 (1991)

Overhof, H.; Scheffler, M.; Weinert, C. C.: Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon. Physical Review B 43, pp. 12494 - 12506 (1991)

Scheffler, M.; Droste, C.; Fleszar, A.; Máca, F.; Wachutka, G.; Barzel, G.: A self-consistent surface-Green-function (SSGF) method. Physica B 172, pp. 143 - 153 (1991)

Schmalz, A.; Aminpirooz, S.; Becker, L.; Haase, J.; Neugebauer, J.; Scheffler, M.; Batchelor, D. R.; Adams, D. L.; Bogh, E.: Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, pp. 2163 - 2166 (1991)

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.: Anion-antisite-like defects in III-V compounds. Physical Review Letters 65 (16), pp. 2046 - 2049 (1990)

Doyen, G.; Koetter, E.; Vigneron , J.P.; Scheffler, M.: Theory of scanning tunneling microscopy. Applied Physics A 51, pp. 281 - 288 (1990)

Gonze, X.; Käckell, P.; Scheffler, M.: Ghost states for separable, norm-conserving, ab initio pseudopotentials. Physical Review B 41 (17), pp. 12264 - 12267 (1990)

Beeler, F.; Andersen, O. K.; Scheffler, M.: Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles. Physical Review B 41, pp. 1603 - 1624 (1990)

Biernacki, S.; Scheffler, M.: First-principles calculations of thermodynamic potentials of perfect-crystal semiconductors and for defects in semiconductors. Proc. 4th Brazilian School of Semiconductor Physics, pp. 188 - 198 (1990)

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.: Anion-Antisite-like Defects in III-V Compounds. Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20), pp. 469 - 472 (1990)