publication_list

1985

Journal Article

Beeler, F., O.K. Andersen and M. Scheffler: Electronic structure calculation of 3d-transition metal point defects in silicon.

MPG.PuRe

Journal Article

Beeler, F., O.K. Andersen and Matthias Scheffler: Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon.

MPG.PuRe

DOI

publisher-version

Journal Article

Beeler, Franz, Matthias Scheffler, Ove Jepsen and Olle Gunnarsson: Identifiaction of chalcogen defects in silicon.

MPG.PuRe

Journal Article

Beeler, F., M. Scheffler, O. Jepsen and O. Gunnarsson: Identification of chalcogen point-defects sites in silicon by total-energy calculations.

MPG.PuRe

DOI

publisher-version

Journal Article

Máca, F. and M. Scheffler: Calculation of the Green's function for a crystal surface or interface.

MPG.PuRe

Journal Article

Máca, Frantisek, Matthias Scheffler and Werner Berndt: The adsorption of sulphur on Pd(111). I: A LEED analysis of the (sqrt{2} x sqrt{3}) R 30° adsorbate structure.

MPG.PuRe

DOI

Journal Article

Meyer, B.K., J.-M. Spaeth and Matthias Scheffler: As_Ga-induced dichroism in GaAs.

MPG.PuRe

DOI

publisher-version

Journal Article

Scheffler, M., F. Beeler, O. Jepsen, O. Gunnarsson, O.K. Andersen and G.B. Bachelet: Chemical bonding and lattice relaxations of deep-level defects.

MPG.PuRe

Journal Article

Scheffler, M., J.P. Vigneron and G.B. Bachelet: Total-energy gradients and lattice distortions at point defects in semiconductors.

MPG.PuRe

1984

Journal Article

Hora, R. and M. Scheffler: Angle-resolved photoemission and the electronic structure of Pd(111).

MPG.PuRe

DOI

publisher-version

Journal Article

Meyer, B.K., J.-M. Spaeth and M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs.

MPG.PuRe

DOI

publisher-version

Journal Article

Scheffler, Matthias, J. Bernholc, N.O. Lipari and Sokrates T. Pantelides: Electronic structure and identification of deep defects in GaP.

MPG.PuRe

DOI

publisher-version

1983

Journal Article

Pantelides, Sokrates T., I. Ivanov, Matthias Scheffler and J.P. Vigneron: Multivacancies, interstitials, and self-interstitial migration in Si.

MPG.PuRe

Journal Article

Vigneron, J.P., Matthias Scheffler and Sokrates T. Pantelides: Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors.

MPG.PuRe

1982

Journal Article

Bernholc, J., N.O. Lipari, Sokrates T. Pantelides and Matthias Scheffler: Electronic structure of deep sp-bonded impurities in silicon.

MPG.PuRe

DOI

Full

Journal Article

Scheffler, M., J.P. Vigneron and G.B. Bachelet: Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP.

MPG.PuRe

Journal Article

Schirmer, O. and Matthias Scheffler: Determination of deep donor binding energies from their g-values.

MPG.PuRe

1981

Journal Article

Scheffler, Matthias, Sokrates T. Pantelides, N.O. Lipari and J. Bernholc: Identification and properties of native defects in GaP.

MPG.PuRe

1980

Journal Article

Hora, Ralf and Matthias Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd.

MPG.PuRe