Publications of Matthias Scheffler
All genres
Journal Article (607)
1993
Journal Article
Neugebauer, Jörg and Matthias Scheffler: Theory of adsorption and desorption in high electric fields.
Journal Article
Neugebauer, Jörg and Matthias Scheffler: Mechanisms of island formation of alkali-metal adsorbates on Al(111).
Journal Article
Oppo, Sabrina, Vincenzo Fiorentini and Matthias Scheffler: Theory of adsorption and surfactant effect of Sb on Ag(111).
Journal Article
Pankratov, Oleg and M. Scheffler: Electron correlations on a potassium-covered GaAs(110) surface: ab-initio calculations of the Hubbard correlation energy.
Journal Article
Pankratov, Oleg and M. Scheffler: Bound bipolaron at the surface: The negative-U behavior of GaAs(110) with adsorbed alkali metals.
Journal Article
Pankratov, Oleg and Matthias Scheffler: Hubbard correlations and charge transfer at the GaAs(110) surface with alkali adsorbates.
Journal Article
Pehlke, Eckard and Matthias Scheffler: Evidence for site-sensitive screening of core holes at the Si and Ge(001) surface.
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, Michael Methfessel and Matthias Scheffler: Vacancy-formation energies at the (111) surface and in bulk Al, Cu, Ag, and Rh.
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Scheffler, Matthias, Jörg Neugebauer and Roland Stumpf: A step from surface fiction towards surface science.
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Stampfl, Catherine, , , , Matthias Scheffler, Herbert Over and : The structure of Al(111)-K-(√3 × √3)R30° determined by LEED: stable and metastable adsorption sites.
Journal Article
Wenzien, Bernd, Jörg Bormet, Jörg Neugebauer and Matthias Scheffler: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites.
Journal Article
, and Matthias Scheffler: Pressure dependence of deep levels of the As antisite, the Ga-vacancy-As-interstitial pair, and of the stable and metastable states of EL2.
1992
Journal Article
and M. Scheffler: Self-consistent study of the electronic and structural properties of the clean Si(001) (2x1) surface.
Journal Article
Dabrowski, Jarek and Matthias Scheffler: Theory of defect metastabilities in III-V compounds.
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and M. Scheffler: Defect metastability in III-V compounds.
Journal Article
Doyen, G., D. Drakova, V. Mujica and Matthias Scheffler: Theory of the scanning tunneling microscope.
Journal Article
Hebenstreit, Jörk and Matthias Scheffler: Self-consistent pseudopotential calculations for sodium adsorption on GaAs(110).
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Heinemann, Martina and Matthias Scheffler: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface.
Journal Article
Methfessel, Michael, D. Hennig and Matthias Scheffler: Calculated surface energies of the 4d transition metals: A study of bond-cutting models.
Journal Article
Methfessel, Michael, D. Hennig and Matthias Scheffler: Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals.