Publications of Matthias Scheffler

Book Chapter (26)

2019
Book Chapter
Jacobsen, K.W. and M. Scheffler: The role of data and artificial intelligence. In: Research needs towards sustainable production of fuels and chemicals. Energy-X, Grenoble, 79–90 (2019).
2012
Book Chapter
Michaelides, A. and M. Scheffler: An Introduction to the Theory of Crystalline Elemental Solids and their Surfaces. In: Surface and Interface Science: Concepts and Methods. (Ed.): K. Wandelt. Wiley-VCH, Weinheim, 13–72 (2012).
2009
Book Chapter
Pentcheva, R., N. Mulakaluri, W. Moritz, W.E. Pickett, H.-G. Kleinhenz and M. Scheffler: Compensation mechanisms and functionality of transition metal oxide surfaces and Interfaces: A density functional theory study. In: High Performance Computing in Science and Engineering. (Eds.): S. Wagner, M. Steinmetz, A. Bode, and M. Brehm. Springer, Berlin, 709–717 (2009).
2007
Book Chapter
Schindlmayr, A. and M. Scheffler: Quasiparticle calculations for point defects at semiconductor surfaces. In: Theory of Defects in Semiconductors. (Eds.): D.A. Drabold and S.K. Estreicher. (Topics in Applied Physics, Vol. 104). Springer, Berlin Heidelberg, 165–192 (2007).
2005
Book Chapter
Reuter, K., C. Stampfl and M. Scheffler: Ab initio atomistic thermodynamics and statistical mechanics of surface properties and functions. In: Handbook of Materials Modeling. (Ed.): S. Yip. Springer, Dordrecht, 149–194 (2005).
2002
Book Chapter
Fichthorn, K.A., M.L. Merrick, R. Pentcheva and M. Scheffler: Island nucleation in metal thin-film growth. In: Atomistic Aspects of Epitaxial Growth. (Eds.): M. Kotrla, N.I. Papanicolaou, D.D. Vvedensky, and L.T. Wille. Kluwer, Dordrecht, 87–97 (2002).
Book Chapter
Scheffler, M. and P. Kratzer: Ab inito thermodynamics and statistical mechanics of diffusion, growth, and self-assembly of quantum dots. In: Atomistic Aspects of Epitaxial Growth. (Eds.): M. Kotrla, N.I. Papanicolaou, D.D. Vvedensky, and L.T. Wille. (NATO Science Series II: Mathematics, Physics and Chemistry, Vol. 65). Kluwer, The Netherlands, 355–369 (2002).
2001
Book Chapter
Fichthorn, K.A. and M. Scheffler: Substrate-mediated interaction on Ag(111) surfaces from first principles. In: Collective diffusion on surfaces: correlation effects and adatom interactions. (Eds.): M.C. Tringides and Z. Chvoj. (NATO science series: 2, Mathematics, physics and chemistry, Vol. 29). Kluwer, Dordrecht, 225–236 (2001).
Book Chapter
Schwarz, G., J. Neugebauer and M. Scheffler: Point defects on III-V semiconductor surfaces. In: Proceedings of the 25th International Conference on the Physics of Semiconductors: Osaka, Japan, September 17 - 22, 2000. (Eds.): N. Miura and T. Ando. (Springer proceedings in physics, Vol. 87). Springer, Berlin, 1377–1380 (2001).
2000
Book Chapter
Scheffler, M. and C. Stampfl: Theory of Adsorption on Metal Substrates. In: Electronic Structure. (Eds.): K. Horn and M. Scheffler. (Handbook of Surface Science, Vol. 2). Elsevier, Amsterdam, 286–356 (2000).
1998
Book Chapter
Ratsch, C., P. Ruggerone and M. Scheffler: Study of strain and temperature dependence of metal epitaxy. In: Morphological Organization in Epitaxial Growth and Removal. (Eds.): Z. Zhang and M.G. Lagally. (Series on directions in condensed matter physics, Vol. 14). World Scientific, Singapore, 3–29 (1998).
1997
Book Chapter
Ratsch, C., P. Ruggerone and M. Scheffler: Density-functional theory of surface diffusion and epitaxial growth of metals. In: Surface Diffusion: Atomistic and Collective Processes. (Ed.): M.C. Tringides. (NATO ASI Series B: Physics, Vol. 360). Springer, Berlin, 83–101 (1997).
Book Chapter
Ruggerone, P., C. Ratsch and M. Scheffler: Density-functional theory of epitaxial growth of metals. In: Growth and properties of ultrathin epitaxial layers. (Eds.): D.A. King and D.P. Woodruff. (The chemical physics of solid surfaces, Vol. 8). Elsevier, Amsterdam, 490–544 (1997).
1996
Book Chapter
Scheffler, M., V. Fiorentini and S. Oppo: Homoepitaxial growth of metals and the role of surfactants. In: Surface science: principles and current applications ; [based on invited lectures presented ... at the German-Australian Workshop on Surface Science held at Schloß Ringberg, Tegernsee, Germany, in January 1994]. (Eds.): R.J. MacDonald, E.C. Taglauer, and K.R. Wandelt. Springer, Berlin, 219–231 (1996).
1993
Book Chapter
Pankratov, O. and M. Scheffler: Clustering and Correlations on GaAs - Metal Interface. In: Semiconductor Interfaces at the Sub-Nanometer Scale. (Eds.): H.W.M. Salemink and M.D. Pashley. (NATO ASI Series E: Applied Sciences, Vol. 243). Springer, Dordrecht, 121–126 (1993).
Book Chapter
Scherz, U. and M. Scheffler: Density-functional theory of sp-bonded defects in III/V semiconductors. In: Imperfections in III/V Materials. (Ed.): E.R. Weber. (Semiconductors and Semimetals, Vol. 38). Academic Press, Boston, 1–58 (1993).
1986
Book Chapter
Scheffler, M. and U. Scherz: Resonant Raman scattering at point defects in GaAs. In: Defects in Semiconductors. (Ed.): H.J. von Bardeleben. (Materials Science Forum, Vol. 10-12). Trans Tech Publications Ltd., Switzerland, 353–358 (1986).
Book Chapter
Weinert, C.M. and M. Scheffler: Chalcogen and vacancy pairs in silicon: Electronic structure and stabilities. In: Defects in Semiconductors. (Ed.): H.J. von Bardeleben. (Materials Science Forum, Vol. 10-12). Trans Tech Publications Ltd., Switzerland, 25–30 (1986).
1983
Book Chapter
Scheffler, M. and A.M. Bradshaw: The electronic structure of adsorbed layers. In: Adsorption at Solid Surfaces. (The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Vol. 2). Elsevier, Amsterdam, 165–257 (1983).
1982
Book Chapter
Scheffler, M.: Electronic structure of simple deep-level defects in semiconductors. In: Festkörperprobleme. (Ed.): P. Grosse. (Festkörperprobleme, Vol. XXII). Vieweg, Braunschweig, 115–148 (1982).
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