CO2 High Power Lasers for EUV Lithography

  • Special MP Department Seminar
  • Date: Sep 18, 2025
  • Time: 09:30 AM - 10:30 AM (Local Time Germany)
  • Speaker: James Doogan
  • Trumpf Laser and Machinery Ireland
  • Location: Building K, Haber-Villa, Faradayweg 8, 14195 Berlin
  • Room: Seminar Room
  • Host: Department of Molecular Physics
  • Contact: thomas@fhi.mpg.de
CO<sub>2</sub> High Power Lasers for EUV Lithography

TRUMPF and ASML developed a technology to produce extreme ultraviolet (EUV) light with a wavelength of 13.5 nanometers for semiconductor manufacturing: In a vacuum chamber, a droplet generator shoots 50,000 tin droplets per second. Each of these droplets is hit by a laser pulse and turned into plasma. This produces EUV light, which is directed by mirrors onto wafers to be exposed for lithography. The laser pulse for the plasma radiation is provided by a pulsed CO2 laser system and amplifier ("Drive laser") developed by TRUMPF. This talk will focus on how the TRUMPF CO2 drive laser works for EUV lithography.

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