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VERSION:2.0
PRODID:icalendar-ruby
CALSCALE:GREGORIAN
METHOD:PUBLISH
BEGIN:VEVENT
DTSTAMP:20260523T210043Z
UID:https://www.fhi.mpg.de/events/42519/60031
DTSTART:20250815T140000Z
CLASS:PUBLIC
CREATED:20250730T102718Z
DESCRIPTION:Change notice: NOMAD Laboratory\nAs integrated circuit semicond
 uctor devices continue to shrink in size\, hafnium-based oxides have emerg
 ed as a key candidate material for breaking through the performance limits
  of traditional dielectric/ferroelectric materials\, thanks to their high 
 dielectric constant\, nanoscale ferroelectricity\, and excellent compatibi
 lity with CMOS processes.\nSpeaker: Prof. Wei Ren
LAST-MODIFIED:20250730T105859Z
LOCATION:Building T\, Room: 0.18/0.19
ORGANIZER;CN=NOMAD Laboratory:mailto:
SUMMARY:AI-Driven Design of Dielectric/Ferroelectric Properties and Predict
 ion of Electronic Structures
URL;VALUE=URI:https://www.fhi.mpg.de/events/42519/60031
END:VEVENT
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